View Item 

Show simple item record

P‐11: Electrical Properties and Stability of Dual‐Gate Coplanar Homojunction Amorphous Indium‐Gallium‐Zinc‐Oxide Thin‐Film Transistor
dc.contributor.authorBaek, Gwanghyeonen_US
dc.contributor.authorKuo, Alexen_US
dc.contributor.authorKanicki, Jerzyen_US
dc.contributor.authorAbe, Katsumien_US
dc.contributor.authorKumomi, Hideyaen_US
dc.date.accessioned2012-09-05T14:46:04Z
dc.date.available2012-09-05T14:46:04Z
dc.date.issued2011-06en_US
dc.identifier.citationBaek, Gwanghyeon; Kuo, Alex; Kanicki, Jerzy; Abe, Katsumi; Kumomi, Hideya (2011). "P‐11: Electrical Properties and Stability of Dual‐Gate Coplanar Homojunction Amorphous Indium‐Gallium‐Zinc‐Oxide Thin‐Film Transistor." SID Symposium Digest of Technical Papers 42(1). <http://hdl.handle.net/2027.42/93526>en_US
dc.identifier.issn0097-966Xen_US
dc.identifier.issn2168-0159en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/93526
dc.description.abstractThe electrical characteristics and stabilities of dual‐gate (DG) coplanar homojunction amorphous indium‐gallium‐zinc‐oxide thin‐film transistors (a‐IGZO TFTs) are described. When the gate voltage is applied on top and bottom electrodes, the DG a‐IGZO TFT showed an excellent electrical performance with the sub‐threshold swing of 99 mV/dec, the mobility of 15.1 cm 2 /V·s and the on‐off ratio of 10 9 . Under positive bias temperature stress, the device threshold voltage shifts about +4.5V after 10,000 seconds, while its shifts under negative bias temperature stress are very small. The effect of TFT illumination is also discussed.en_US
dc.publisherBlackwell Publishing Ltden_US
dc.publisherWiley Periodicals, Inc.en_US
dc.titleP‐11: Electrical Properties and Stability of Dual‐Gate Coplanar Homojunction Amorphous Indium‐Gallium‐Zinc‐Oxide Thin‐Film Transistoren_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelElectrical Engineeringen_US
dc.subject.hlbtoplevelEngineeringen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDept. of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, USAen_US
dc.contributor.affiliationotherCannon Research Center, Cannon Inc., Ohta‐Ku, Tokyo, Japanen_US
dc.identifier.pmid21909094en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/93526/1/1.3621023.pdf
dc.identifier.doi10.1889/1.3621023en_US
dc.identifier.sourceSID Symposium Digest of Technical Papersen_US
dc.identifier.citedreferenceK. S. Karim, et al, “ X‐ray Detector with On‐Pixel Amplification for Large Area Diagnostic Medical Imaging,” Circuits, Devices and Systems, IEE Proceedings, vol. 150, pp. 267 – 73, 2003.en_US
dc.identifier.citedreferenceA. Sato, et al, “ Amorphous In‐Ga‐Zn‐O Coplanar Homojunction Thin‐Film Transistor,” Applied Physics Letters, vol. 94, p. 133502, 2009.en_US
dc.identifier.citedreferenceT.‐C. Fung, et al, “ Photofield‐Effect in Amorphous In‐Ga‐Zn‐O (a‐IGZO) Thin‐Film Transistors,” Journal of Information Display, vol. 9, pp. 21 – 29, 2008.en_US
dc.identifier.citedreferenceT.‐C. Fung, et al, “ Electrical Instability of RF Sputter Amorphous In‐Ga‐Zn‐O Thin‐Film Transistors,” J. Display Technol., vol. 5, pp. 452 – 461, 2009.en_US
dc.identifier.citedreferenceJ. Kanicki, et al, “ Performance of Thin Hydrogenated Amorphous Silicon Thin‐Film Transistors,” Journal of Applied Physics, vol. 69, pp. 2339 – 2345, 1991.en_US
dc.identifier.citedreferenceJ.‐S. Jung, et al, “ Stability Improvement of Gallium Indium Zinc Oxide Thin Film Transistors by Post‐Thermal Annealing,” ECS Transactions, vol. 16, pp. 309 – 313, 2008.en_US
dc.identifier.citedreferenceA. Sato, et al, “ Amorphous In‐Ga‐Zn‐O Thin‐Film Transistor with Coplanar Homojunction Structure,” Thin Solid Films, vol. 518, pp. 1309 – 1313, 2009.en_US
dc.identifier.citedreferenceA. R. Brown, et al, “ A 3‐D Atomistic Study of Archetypal Double Gate MOSFET Structures,” Journal of Computational Electronics, vol. 1, pp. 165 – 169, 2002.en_US
dc.identifier.citedreferenceR. A. Street, et al, “ Two‐Dimensional Amorphous Silicon Image Sensor Arrays,” Journal of Non-Crystalline Solids, vol. 198–200, pp. 1151 – 1154, 1996.en_US
dc.identifier.citedreferenceP. Servati, et al, “ Static Characteristics of a‐Si:H Dual‐Gate TFTs,” Electron Devices, IEEE Transactions on, vol. 50, pp. 926 – 932, 2003.en_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


Files in this item

Name:
1.3621023.pdf
Size:
1.200MB
Format:
PDF
View/Open

Show simple item record

Remediation of Harmful Language

The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.

Accessibility

If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.