Now showing items 1031-1040 of 1043
Pseudomorphic InGaAs base ballistic hot‐electron device
(The American Institute of Physics, 1988-11-14)
We report the first successful incorporation of a pseudomorphic InGaAs base in a ballistic hot‐electron device. The device, with a 28‐nm‐thick In0.15Ga0.85As base, had a collector‐base breakdown voltage of 0.55 V and a ...
Growth and properties of quasiperiodic heterostructures
(Elsevier, 1987-02-02)
We have recently demonstrated the MBE growth of heterostructures in which layers of GaAs and AlAs were deposited in a Fibonacci sequence. This yields a quasiperiodic structure with the ratio of incommensurate periods equal ...
Tests of a large air‐core superconducting solenoid as a nuclear‐reaction‐product spectrometer
(The American Institute of Physics, 1987-09)
An air‐core superconducting solenoid, with a diameter of 0.2 m and a length of 0.4 m, has been configured for use as a heavy‐ion reaction‐product spectrometer (E/A≤5 MeV/u) near θ=0 °. The spectrometer has a large solid ...
Nonrandom alloying in In0.52Al0.48As/InP grown by molecular beam epitaxy
(The American Institute of Physics, 1987-03-09)
Anomalous behavior in Hall data of molecular beam epitaxial In0.52Al0.48As/InP for T≥400 K suggests the presence of alloy clustering. The relaxation time for alloy clustering has been determined and analysis of measured ...
Electric field effects on intersubband transitions in quantum well structures
(Elsevier, 1987)
We report on a Raman scattering study of the electric-field dependence of c0 --> c1 intersubband transitions of electrons in a 264 A GaAs- Al0.3Ga0.7As quantum-well structure. The measured Stark shifts are in very good ...
Growth and properties of In0.52Al0.48As/In0.53Ga0.47As, GaAS: In and InGaAs/GaAs multilayers
(Elsevier, 1987-02-02)
We have investigated the properties of some In-containing materials and heterostructures grown by molecular beam epitaxy on GaAs and InP substrates. Photoluminescence spectra of InGaAs/InAlAs quantum wells have been related ...
A characteristic study of the superconducting phase in the niobium‐aluminum‐germanium system
(The American Institute of Physics, 1984-09-15)
A study has been made of the time and temperature dependence of the growth of the superconducting A‐15 phase and its grains in the Nb‐Al‐Ge system. In addition, changes in the microstructure and composition of the A‐15 ...
Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping
(The American Institute of Physics, 1986-08-25)
We have studied the effects of adding small amounts of In (0.2–1.2%) to GaAs grown by molecular beam epitaxy. The density of four electron traps decreases in concentration by an order of magnitude, and the peak intensities ...