Now showing items 1041-1043 of 1043
Use of cation‐stabilized conditions to improve compatibility of CdTe and HgTe molecular beam epitaxy
(The American Institute of Physics, 1989-10-09)
Reflection high‐energy electron diffraction (RHEED) dynamic studies are used to reveal the strong differences in growth kinetics of CdTe and HgTe grown by molecular beam epitaxy. These differences arise from the stronger ...
Field‐dependent linewidths and photoluminescence energies in GaAs‐AlGaAs multiquantum well modulators
(The American Institute of Physics, 1986-05-12)
Photoluminescence linewidths and transition energies have been measured in GaAs‐AlGaAs multiple quantum wells with large (≥160 Å) barrier widths as a function of applied transverse electric field. The experimental data ...
Demonstration of dual gain mechanism in an InGaAs/InAlAs superlattice photodiode
(The American Institute of Physics, 1987-04-27)
A high‐gain photodiode in which the internal gain can result from either potential barrier lowering or mass filtering action, depending on device geometry and bias conditions, is proposed and demonstrated. The photodiode ...