Now showing items 101-105 of 105
Observation of incident angle dependent phonon absorption in hydrogenated amorphous silicon nitride thin films
(The American Institute of Physics, 1998-12-28)
We have demonstrated the existence of longitudinal- and transverse-like optical modes of Si–N bond in vibrational absorption spectrum of hydrogenated amorphous silicon nitride thin films. One of the longitudinal-like optical ...
Effect of [111] texture on the perpendicular magnetic anisotropy of Co/Ni multilayers
(The American Institute of Physics, 1998-09-15)
[111]fcc[111]fcc oriented [Co(2 Å)/Ni(7 Å)]20[Co(2Å)/Ni(7Å)]20 multilayers were prepared by molecular beam epitaxy at room temperature on epitaxial Au/Ag buffer layers grown on chemically etched Si(111) surfaces. NH4FNH4F ...
Analysis of reflectometry and ellipsometry data from patterned structures
(The American Institute of Physics, 1998-11-24)
Specular reflected light techniques, including both single wavelength and spectroscopic versions of ellipsometry and reflectometry, have been used for both etch and growth rate control. However, use of these techniques for ...
Texture development mechanisms in ion beam assisted deposition
(The American Institute of Physics, 1998-11-01)
Three-dimensional molecular dynamics simulations of ion beam assisted deposition (IBAD) are performed to determine the mechanisms of crystallographic texture selection during the IBAD of polycrystalline films. A face ...
Adsorption-controlled growth of Bi4Ti3O12Bi4Ti3O12 by reactive MBE
(The American Institute of Physics, 1998-06-01)
Adsorption-controlled conditions have been identified and utilized to grow epitaxial bismuth titanate thin films by reactive molecular beam epitaxy. Growth of stoichiometric, phase pure, cc-axis oriented, epitaxial films ...