Now showing items 5881-5890 of 5908
Use of cation‐stabilized conditions to improve compatibility of CdTe and HgTe molecular beam epitaxy
(The American Institute of Physics, 1989-10-09)
Reflection high‐energy electron diffraction (RHEED) dynamic studies are used to reveal the strong differences in growth kinetics of CdTe and HgTe grown by molecular beam epitaxy. These differences arise from the stronger ...
Stability of Two Superposed Elasticoviscous Liquids in Plane Couette Flow
(The American Institute of Physics, 1969-03)
It is found that the elasticity in the liquid cannot only destabilize the flow, but it can also stabilize the flow for certain values of depth ratio, viscosity ratio, and elasticity ratio. The stabilizing or destabilizing ...
Fabrication and optical properties of nano-structured semipolar InGaN/GaN quantum wells on c-plane GaN template
(WILEY-VCH Verlag, 2008-05)
High density self-assembled nanostructured semipolar (NSSP) GaN pyramids are fabricated based on c-plane GaN template by in situ silane treatment followed by high temperature treatment. Semipolar InGaN/GaN multiple ...
The spacing of streaks in unsteady turbulent wall‐bounded flow
(The American Institute of Physics, 1994-07)
The spacing of streaks of low‐speed fluid has been studied experimentally in a wall‐bounded turbulent flow in which sinusoidal unsteadiness was superposed on an otherwise steady mainstream over a range of frequencies. The ...
Field‐dependent linewidths and photoluminescence energies in GaAs‐AlGaAs multiquantum well modulators
(The American Institute of Physics, 1986-05-12)
Photoluminescence linewidths and transition energies have been measured in GaAs‐AlGaAs multiple quantum wells with large (≥160 Å) barrier widths as a function of applied transverse electric field. The experimental data ...
Demonstration of dual gain mechanism in an InGaAs/InAlAs superlattice photodiode
(The American Institute of Physics, 1987-04-27)
A high‐gain photodiode in which the internal gain can result from either potential barrier lowering or mass filtering action, depending on device geometry and bias conditions, is proposed and demonstrated. The photodiode ...
Prediction of conditions for a single pulse discharge
(The American Institute of Physics, 1977-01)
An empirical method is presented for the prediction of conditions necessary to obtain a single pulse discharge with no oscillation, no restrike, and no residual energy stored with zero current and zero voltage at the end ...
Surface reconstructions of In-enriched InGaAs alloys
(The American Institute of Physics, 2003-08-18)
The atomic structure of In0.81Ga0.19As/InPIn0.81Ga0.19As/InP alloy layers was examined using in situ scanning tunneling microscopy. The (2×3) reconstruction observed during growth by reflection high-energy electron diffraction ...
Low‐temperature conductivity of epitaxial ZnSe in the impurity band regime
(The American Institute of Physics, 1994-11-14)
Low‐temperature conductivity of several samples of ZnSe grown by molecular‐beam epitaxy has been measured. The data indicate that for samples with carrier concentration below or near Nc, metal insulator transition, the ...
Ion/Electron Redistributed 3D Flexible Host for Achieving Highly Reversible Li Metal Batteries
(Wiley Periodicals, Inc., 2022-07)
3D carbon frameworks are promising hosts to achieve highly reversible lithium (Li) metal anodes, whereas insufficient effects are attributed to their single electron conductivity causing local aggregating of electron/Li+ ...