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An AlGaN Tunnel Junction Light Emitting Diode operating at 255 nm

dc.contributor.authorPandey, Ayush
dc.contributor.authorGim, Jiseok
dc.contributor.authorHovden, Robert
dc.contributor.authorMi, Zetian
dc.date.accessioned2021-04-26T16:12:39Z
dc.date.available2021-04-26T16:12:39Z
dc.date.issued2020-12-14
dc.identifier.urihttps://hdl.handle.net/2027.42/167212en
dc.language.isoen_USen_US
dc.titleAn AlGaN Tunnel Junction Light Emitting Diode operating at 255 nmen_US
dc.typeDataseten_US
dc.subject.hlbsecondlevelComputer Science
dc.subject.hlbsecondlevelElectrical Engineering
dc.subject.hlbtoplevelEngineering
dc.contributor.affiliationumElectrical Engineering and Computer Science, Department ofen_US
dc.contributor.affiliationumcampusAnn Arboren_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/167212/1/Figures – 255 nm UV LED (1).pdf
dc.identifier.doihttps://dx.doi.org/10.7302/887
dc.description.depositorSELFen_US
dc.working.doi10.7302/887en_US
dc.owningcollnameElectrical Engineering and Computer Science, Department of (EECS)


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