Now showing items 4061-4070 of 4078
Nonrandom alloying in In0.52Al0.48As/InP grown by molecular beam epitaxy
(The American Institute of Physics, 1987-03-09)
Anomalous behavior in Hall data of molecular beam epitaxial In0.52Al0.48As/InP for T≥400 K suggests the presence of alloy clustering. The relaxation time for alloy clustering has been determined and analysis of measured ...
Electric field effects on intersubband transitions in quantum well structures
(Elsevier, 1987)
We report on a Raman scattering study of the electric-field dependence of c0 --> c1 intersubband transitions of electrons in a 264 A GaAs- Al0.3Ga0.7As quantum-well structure. The measured Stark shifts are in very good ...
Growth and properties of In0.52Al0.48As/In0.53Ga0.47As, GaAS: In and InGaAs/GaAs multilayers
(Elsevier, 1987-02-02)
We have investigated the properties of some In-containing materials and heterostructures grown by molecular beam epitaxy on GaAs and InP substrates. Photoluminescence spectra of InGaAs/InAlAs quantum wells have been related ...
Die Coulomb-Energien leichter Atomkerne
(Springer-Verlag, 1960-04)
A compilation of the known data on Coulomb energy differences of isobaric doublets and isobaric triplets is given. Plots of the Coulomb energy differences versus ¯Z/A 1/3 with ¯Z =( Z 1 + Z 2 )/2 show an analogous shell ...
A characteristic study of the superconducting phase in the niobium‐aluminum‐germanium system
(The American Institute of Physics, 1984-09-15)
A study has been made of the time and temperature dependence of the growth of the superconducting A‐15 phase and its grains in the Nb‐Al‐Ge system. In addition, changes in the microstructure and composition of the A‐15 ...
Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping
(The American Institute of Physics, 1986-08-25)
We have studied the effects of adding small amounts of In (0.2–1.2%) to GaAs grown by molecular beam epitaxy. The density of four electron traps decreases in concentration by an order of magnitude, and the peak intensities ...
Photoluminescence and electro‐optic properties of small (25–35 nm diameter) quantum boxes
(The American Institute of Physics, 1993-05-31)
The luminescence and electro‐optic properties of buried 25–35 nm quantum boxes have been measured. The quantum boxes were defined by a combination of molecular beam epitaxial growth and regrowth, electron beam lithography, ...
Erratum: Matrix Elements for Configuration d4d4 in a Weak Octahedral Field Using Racah Methods
(The American Institute of Physics, 1970-09-01)
Use of cation‐stabilized conditions to improve compatibility of CdTe and HgTe molecular beam epitaxy
(The American Institute of Physics, 1989-10-09)
Reflection high‐energy electron diffraction (RHEED) dynamic studies are used to reveal the strong differences in growth kinetics of CdTe and HgTe grown by molecular beam epitaxy. These differences arise from the stronger ...
Stability of Two Superposed Elasticoviscous Liquids in Plane Couette Flow
(The American Institute of Physics, 1969-03)
It is found that the elasticity in the liquid cannot only destabilize the flow, but it can also stabilize the flow for certain values of depth ratio, viscosity ratio, and elasticity ratio. The stabilizing or destabilizing ...