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Growth phenomena and characteristics of strained InxGa1-xAs on GaAs
dc.contributor.authorPamulapati, Jagadeeshen_US
dc.contributor.authorBerger, P.en_US
dc.contributor.authorChang, K.en_US
dc.contributor.authorOh, J. E.en_US
dc.contributor.authorChen, Yien_US
dc.contributor.authorSingh, Jaspriten_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorGibala, Ronalden_US
dc.date.accessioned2006-04-07T20:53:45Z
dc.date.available2006-04-07T20:53:45Z
dc.date.issued1989-02-02en_US
dc.identifier.citationPamulapati, J., Berger, P., Chang, K., Oh, J., Chen, Yi, Singh, J., Bhattacharya, P., Gibala, R. (1989/02/02)."Growth phenomena and characteristics of strained InxGa1-xAs on GaAs." Journal of Crystal Growth 95(1-4): 193-196. <http://hdl.handle.net/2027.42/28059>en_US
dc.identifier.urihttp://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-D7/2/c2547074f74eb6cbb379b91000847a9ben_US
dc.identifier.urihttps://hdl.handle.net/2027.42/28059
dc.description.abstractWe have investigated the molecular beam epitaxial growth, structural and optical properties of InGaAs on GaAs. We have focused first on the initial stages of growth where the growth is expected to be under coherent strain and second on the nature of single and multiple quantum well heterointerfaces.en_US
dc.format.extent452716 bytes
dc.format.extent3118 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.language.isoen_US
dc.publisherElsevieren_US
dc.titleGrowth phenomena and characteristics of strained InxGa1-xAs on GaAsen_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbsecondlevelMathematicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122, USAen_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122, USAen_US
dc.contributor.affiliationumDepartment of Materials Science and Engineering, The University of Michigan, Ann Arbor, Michigan 48109-2122, USAen_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122, USAen_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122, USAen_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122, USAen_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122, USAen_US
dc.contributor.affiliationumDepartment of Materials Science and Engineering, The University of Michigan, Ann Arbor, Michigan 48109-2122, USAen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/28059/1/0000498.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1016/0022-0248(89)90380-1en_US
dc.identifier.sourceJournal of Crystal Growthen_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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