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Epitaxial growth and characterization of GaAs/Al/GaAs heterostructures
dc.contributor.authorOh, J. E.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorSingh, Jaspriten_US
dc.contributor.authorDos Passos, Waldemaren_US
dc.contributor.authorClarke, Royen_US
dc.contributor.authorMestres, N.en_US
dc.contributor.authorMerlin, R.en_US
dc.contributor.authorChang, Kevin H.en_US
dc.contributor.authorGibala, Ronalden_US
dc.date.accessioned2006-04-10T13:46:14Z
dc.date.available2006-04-10T13:46:14Z
dc.date.issued1990-04-01en_US
dc.identifier.citationOh, J. E., Bhattacharya, P. K., Singh, J., Dos Passos, W., Clarke, R., Mestres, N., Merlin, R., Chang, K. H., Gibala, R. (1990/04/01)."Epitaxial growth and characterization of GaAs/Al/GaAs heterostructures." Surface Science 228(1-3): 16-19. <http://hdl.handle.net/2027.42/28626>en_US
dc.identifier.urihttp://www.sciencedirect.com/science/article/B6TVX-46SXV0K-SG/2/25a979dd9228c75a2d24dcf26c36383den_US
dc.identifier.urihttps://hdl.handle.net/2027.42/28626
dc.description.abstractWe report on transmission electron microscopy, secondary ion mass spectroscopy, X-ray and Raman scattering studies of GaAs/Al/GaAs heterostructures grown by migration enhanced epitaxy.en_US
dc.format.extent319857 bytes
dc.format.extent3118 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.language.isoen_US
dc.publisherElsevieren_US
dc.titleEpitaxial growth and characterization of GaAs/Al/GaAs heterostructuresen_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelMaterials Science and Engineeringen_US
dc.subject.hlbsecondlevelChemistryen_US
dc.subject.hlbsecondlevelChemical Engineeringen_US
dc.subject.hlbsecondlevelBiological Chemistryen_US
dc.subject.hlbtoplevelEngineeringen_US
dc.subject.hlbtoplevelScienceen_US
dc.subject.hlbtoplevelHealth Sciencesen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109, USAen_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109, USAen_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109, USAen_US
dc.contributor.affiliationumDepartment of Physics, The University of Michigan, Ann Arbor, MI 48109, USAen_US
dc.contributor.affiliationumDepartment of Physics, The University of Michigan, Ann Arbor, MI 48109, USAen_US
dc.contributor.affiliationumDepartment of Physics, The University of Michigan, Ann Arbor, MI 48109, USAen_US
dc.contributor.affiliationumDepartment of Physics, The University of Michigan, Ann Arbor, MI 48109, USAen_US
dc.contributor.affiliationumDepartment of Materials and Metallurgical Engineering, The University of Michigan, Ann Arbor, MI 48109, USAen_US
dc.contributor.affiliationumDepartment of Materials and Metallurgical Engineering, The University of Michigan, Ann Arbor, MI 48109, USAen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/28626/1/0000440.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1016/0039-6028(90)90248-7en_US
dc.identifier.sourceSurface Scienceen_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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