The bound-state resonant tunneling transistor (BSRTT): Fabrication, D.C. I-V characteristics and high-frequency properties

Abstract

The output characteristics of resonant tunneling transistors with a charge filled bound state quantum well base obtained by a self-consistent solution of Poisson's and Schrodinger's equations show the effect of coupling between the input and output ports of the device and the effect on the current-voltage characteristics. Using a self-aligned process transistors were fabricated which showed a current gain of 3 and transconductances of 30 mS. The output characteristics do not saturate and this is in qualitative agreement with theoretical predictions. The charge and potential distributions obtained from the self-consistent calculations are used in a quasi-static analysis of the small signal parameters for a hybrid-[pi] model, and the high-frequency performance of the transistor is analyzed.