Valence and conduction band offsets of a ZrO 2 /SiO  x  N  y  /n-Si CMOS gate stack: A combined photoemission and inverse photoemission study

Sayan, S.; Bartynski, R. A.; Zhao, X.; Gusev, E. P.; Vanderbilt, D.; Croft, M.; Banaszak Holl, Mark M.; Garfunkel, E.

Valence and conduction band offsets of a ZrO 2 /SiO x N y /n-Si CMOS gate stack: A combined photoemission and inverse photoemission study

Sayan, S.; Bartynski, R. A.; Zhao, X.; Gusev, E. P.; Vanderbilt, D.; Croft, M.; Banaszak Holl, Mark M.; Garfunkel, E.

2004-08

Citation: Sayan, S.; Bartynski, R. A.; Zhao, X.; Gusev, E. P.; Vanderbilt, D.; Croft, M.; Banaszak Holl, M.; Garfunkel, E. (2004)."Valence and conduction band offsets of a ZrO 2 /SiO x N y /n-Si CMOS gate stack: A combined photoemission and inverse photoemission study." physica status solidi b 241(10): 2246-2252. <http://hdl.handle.net/2027.42/48783>

Abstract: The densities of states above and below the Fermi energy for the ZrO 2 /SiO x N y /n-Si system are examined by photoemission and inverse photoemission and compared with results from first principles calculations. The measured band gap of ZrO 2 is 5.68 eV and the valence and conduction band offsets relative to silicon are 3.40 and 1.16 eV respectively. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

ISSN: 0370-1972, 1521-3951

DOIs: http://dx.doi.org/10.1002/pssb.200404945

Handle: http://hdl.handle.net/2027.42/48783

Show full item record