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dc.contributor.authorSayan, S.en_US
dc.contributor.authorBartynski, R. A.en_US
dc.contributor.authorZhao, X.en_US
dc.contributor.authorGusev, E. P.en_US
dc.contributor.authorVanderbilt, D.en_US
dc.contributor.authorCroft, M.en_US
dc.contributor.authorBanaszak Holl, Mark M.en_US
dc.contributor.authorGarfunkel, E.en_US
dc.date.accessioned2006-12-07T16:53:46Z
dc.date.available2006-12-07T16:53:46Z
dc.date.issued2004-08en_US
dc.identifier.citationSayan, S.; Bartynski, R. A.; Zhao, X.; Gusev, E. P.; Vanderbilt, D.; Croft, M.; Banaszak Holl, M.; Garfunkel, E. (2004)."Valence and conduction band offsets of a ZrO 2 /SiO x N y /n-Si CMOS gate stack: A combined photoemission and inverse photoemission study." physica status solidi b 241(10): 2246-2252. <http://hdl.handle.net/2027.42/48783>en_US
dc.identifier.issn0370-1972en_US
dc.identifier.issn1521-3951en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/48783
dc.description.abstractThe densities of states above and below the Fermi energy for the ZrO 2 /SiO x N y /n-Si system are examined by photoemission and inverse photoemission and compared with results from first principles calculations. The measured band gap of ZrO 2 is 5.68 eV and the valence and conduction band offsets relative to silicon are 3.40 and 1.16 eV respectively. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)en_US
dc.format.extent160846 bytes
dc.format.extent3118 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.language.isoen_US
dc.publisherWILEY-VCH Verlagen_US
dc.subject.otherPhysicsen_US
dc.titleValence and conduction band offsets of a ZrO 2 /SiO x N y /n-Si CMOS gate stack: A combined photoemission and inverse photoemission studyen_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSemiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA ; WILEY-VCH Verlag Berlin ; Department of Chemistry, Rutgers University, Piscataway, NJ 08854, USA Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA IBM T. J. Watson Research Center, Yorktown Heights, New York, USA Department of Chemistry, University of Michigan, Ann Arbor, MI 48109, USAen_US
dc.contributor.affiliationumDepartment of Chemistry, University of Michigan, Ann Arbor, MI 48109, USAen_US
dc.contributor.affiliationotherDepartment of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USAen_US
dc.contributor.affiliationotherDepartment of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USAen_US
dc.contributor.affiliationotherIBM T. J. Watson Research Center, Yorktown Heights, New York, USAen_US
dc.contributor.affiliationotherDepartment of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USAen_US
dc.contributor.affiliationotherDepartment of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USAen_US
dc.contributor.affiliationotherDepartment of Chemistry, Rutgers University, Piscataway, NJ 08854, USAen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/48783/1/2246_ftp.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1002/pssb.200404945en_US
dc.identifier.sourcephysica status solidi ben_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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