Valence and conduction band offsets of a ZrO 2 /SiO x N y /n-Si CMOS gate stack: A combined photoemission and inverse photoemission study
dc.contributor.author | Sayan, S. | en_US |
dc.contributor.author | Bartynski, R. A. | en_US |
dc.contributor.author | Zhao, X. | en_US |
dc.contributor.author | Gusev, E. P. | en_US |
dc.contributor.author | Vanderbilt, David | en_US |
dc.contributor.author | Croft, M. | en_US |
dc.contributor.author | Banaszak Holl, Mark M. | en_US |
dc.contributor.author | Garfunkel, E. | en_US |
dc.date.accessioned | 2006-12-07T16:53:46Z | |
dc.date.available | 2006-12-07T16:53:46Z | |
dc.date.issued | 2004-08 | en_US |
dc.identifier.citation | Sayan, S.; Bartynski, R. A.; Zhao, X.; Gusev, E. P.; Vanderbilt, D.; Croft, M.; Banaszak Holl, M.; Garfunkel, E. (2004)."Valence and conduction band offsets of a ZrO 2 /SiO x N y /n-Si CMOS gate stack: A combined photoemission and inverse photoemission study." physica status solidi b 241(10): 2246-2252. <http://hdl.handle.net/2027.42/48783> | en_US |
dc.identifier.issn | 0370-1972 | en_US |
dc.identifier.issn | 1521-3951 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/48783 | |
dc.description.abstract | The densities of states above and below the Fermi energy for the ZrO 2 /SiO x N y /n-Si system are examined by photoemission and inverse photoemission and compared with results from first principles calculations. The measured band gap of ZrO 2 is 5.68 eV and the valence and conduction band offsets relative to silicon are 3.40 and 1.16 eV respectively. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) | en_US |
dc.format.extent | 160846 bytes | |
dc.format.extent | 3118 bytes | |
dc.format.mimetype | application/pdf | |
dc.format.mimetype | text/plain | |
dc.language.iso | en_US | |
dc.publisher | WILEY-VCH Verlag | en_US |
dc.subject.other | Physics | en_US |
dc.title | Valence and conduction band offsets of a ZrO 2 /SiO x N y /n-Si CMOS gate stack: A combined photoemission and inverse photoemission study | en_US |
dc.type | Article | en_US |
dc.rights.robots | IndexNoFollow | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA ; WILEY-VCH Verlag Berlin ; Department of Chemistry, Rutgers University, Piscataway, NJ 08854, USA Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA IBM T. J. Watson Research Center, Yorktown Heights, New York, USA Department of Chemistry, University of Michigan, Ann Arbor, MI 48109, USA | en_US |
dc.contributor.affiliationum | Department of Chemistry, University of Michigan, Ann Arbor, MI 48109, USA | en_US |
dc.contributor.affiliationother | Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA | en_US |
dc.contributor.affiliationother | Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA | en_US |
dc.contributor.affiliationother | IBM T. J. Watson Research Center, Yorktown Heights, New York, USA | en_US |
dc.contributor.affiliationother | Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA | en_US |
dc.contributor.affiliationother | Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA | en_US |
dc.contributor.affiliationother | Department of Chemistry, Rutgers University, Piscataway, NJ 08854, USA | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/48783/1/2246_ftp.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1002/pssb.200404945 | en_US |
dc.identifier.source | physica status solidi b | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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