Defect and strain in hydrogen and helium coimplanted single-crystal silicon
Duo, Xinzhong; Liu, Weili; Xing, Su; Zhang, Miao; Fu, Xiaorong; Lin, Chenglu; Hu, Peigang; Wang, S. X.; Wang, L. M.
2001-01-07
Citation
Duo, Xinzhong; Liu, Weili; Xing, Su; Zhang, Miao; Fu, Xiaorong; Lin, Chenglu; Hu, Pegang; Wang, S X; Wang, L M (2001). "Defect and strain in hydrogen and helium coimplanted single-crystal silicon." Journal of Physics D: Applied Physics. 34(1): 5-11. <http://hdl.handle.net/2027.42/48907>
Abstract
In this paper we studied the processes of blistering and exfoliation on the surface of crystal silicon, the evolution of defects/strains in the crystal silicon caused by hydrogen and helium coimplantation during annealing, and the formation of platelets and bubbles in the crystal. It is shown that H + and He + coimplantation produces a synergistic effect, which greatly decreases the total implantation dose, compared with either just H + or He + implantation. We also present the effect of coimplantation and analyse the different roles of H and He in the process of exfoliation during annealing. It seems that the essential role of hydrogen is to interact chemically with the defects in the silicon and create H-stabilized platelets, while the role of helium is to effuse into these platelets and exert a pressure on the inner surface of these platelets. The damage caused by coimplantation is lower than by hydrogen implantation (at the dose that exfoliation requires).Publisher
IOP Publishing Ltd
ISSN
0022-3727
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