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Defect and strain in hydrogen and helium coimplanted single-crystal silicon

dc.contributor.authorDuo, Xinzhongen_US
dc.contributor.authorLiu, Weilien_US
dc.contributor.authorXing, Suen_US
dc.contributor.authorZhang, Miaoen_US
dc.contributor.authorFu, Xiaorongen_US
dc.contributor.authorLin, Chengluen_US
dc.contributor.authorHu, Peigangen_US
dc.contributor.authorWang, S. X.en_US
dc.contributor.authorWang, L. M.en_US
dc.date.accessioned2006-12-19T18:58:24Z
dc.date.available2006-12-19T18:58:24Z
dc.date.issued2001-01-07en_US
dc.identifier.citationDuo, Xinzhong; Liu, Weili; Xing, Su; Zhang, Miao; Fu, Xiaorong; Lin, Chenglu; Hu, Pegang; Wang, S X; Wang, L M (2001). "Defect and strain in hydrogen and helium coimplanted single-crystal silicon." Journal of Physics D: Applied Physics. 34(1): 5-11. <http://hdl.handle.net/2027.42/48907>en_US
dc.identifier.issn0022-3727en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/48907
dc.description.abstractIn this paper we studied the processes of blistering and exfoliation on the surface of crystal silicon, the evolution of defects/strains in the crystal silicon caused by hydrogen and helium coimplantation during annealing, and the formation of platelets and bubbles in the crystal. It is shown that H + and He + coimplantation produces a synergistic effect, which greatly decreases the total implantation dose, compared with either just H + or He + implantation. We also present the effect of coimplantation and analyse the different roles of H and He in the process of exfoliation during annealing. It seems that the essential role of hydrogen is to interact chemically with the defects in the silicon and create H-stabilized platelets, while the role of helium is to effuse into these platelets and exert a pressure on the inner surface of these platelets. The damage caused by coimplantation is lower than by hydrogen implantation (at the dose that exfoliation requires).en_US
dc.format.extent3118 bytes
dc.format.extent368631 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.publisherIOP Publishing Ltden_US
dc.titleDefect and strain in hydrogen and helium coimplanted single-crystal siliconen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Nuclear Engineering and Radiological Sciences, College of Engineering, The University of Michigan, MI, USAen_US
dc.contributor.affiliationumDepartment of Nuclear Engineering and Radiological Sciences, College of Engineering, The University of Michigan, MI, USAen_US
dc.contributor.affiliationotherState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People's Republic of Chinaen_US
dc.contributor.affiliationotherState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People's Republic of Chinaen_US
dc.contributor.affiliationotherState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People's Republic of Chinaen_US
dc.contributor.affiliationotherState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People's Republic of Chinaen_US
dc.contributor.affiliationotherState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People's Republic of Chinaen_US
dc.contributor.affiliationotherState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People's Republic of Chinaen_US
dc.contributor.affiliationotherApplied Ion Beam Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of Chinaen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/48907/2/d10102.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1088/0022-3727/34/1/302en_US
dc.identifier.sourceJournal of Physics D: Applied Physics.en_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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