Mass removal modes in the laser ablation of silicon by a Q-switched diode-pumped solid-state laser (DPSSL)
dc.contributor.author | Lim, Daniel J. | en_US |
dc.contributor.author | Ki, Hyungson | en_US |
dc.contributor.author | Mazumder, Jyoti | en_US |
dc.date.accessioned | 2006-12-19T18:58:48Z | |
dc.date.available | 2006-12-19T18:58:48Z | |
dc.date.issued | 2006-06-21 | en_US |
dc.identifier.citation | Lim, Daniel J; Ki, Hyungson; Mazumder, Jyoti (2006). "Mass removal modes in the laser ablation of silicon by a Q-switched diode-pumped solid-state laser (DPSSL)." Journal of Physics D: Applied Physics. 39(12): 2624-2635. <http://hdl.handle.net/2027.42/48912> | en_US |
dc.identifier.issn | 0022-3727 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/48912 | |
dc.description.abstract | A fundamental study on the Q-switched diode-pumped solid-state laser interaction with silicon was performed both experimentally and numerically. Single pulse drilling experiments were conducted on N-type silicon wafers by varying the laser intensity from 108–109 W cm−2 to investigate how the mass removal mechanism changes depending on the laser intensity. Hole width and depth were measured and surface morphology was studied using scanning electron microscopy. For the numerical model study, Ki et al's self-consistent continuous-wave laser drilling model (2001 J. Phys. D: Appl. Phys. 34 364–72) was modified to treat the solidification phenomenon between successive laser pulses. The model has the capabilities of simulating major interaction physics, such as melt flow, heat transfer, evaporation, homogeneous boiling, multiple reflections and surface evolution. This study presents some interesting results on how the mass removal mode changes as the laser intensity increases. | en_US |
dc.format.extent | 3118 bytes | |
dc.format.extent | 3218862 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.language.iso | en_US | |
dc.publisher | IOP Publishing Ltd | en_US |
dc.title | Mass removal modes in the laser ablation of silicon by a Q-switched diode-pumped solid-state laser (DPSSL) | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Centre for Laser Aided Intelligent Manufacturing, University of Michigan, Ann Arbor, MI 48109-2125, USA | en_US |
dc.contributor.affiliationother | Singapore Institute of Manufacturing Technology, Singapore | en_US |
dc.contributor.affiliationother | Mechanical Engineering Department, Michigan State University, East Lansing, MI 48824-1226, USA | en_US |
dc.contributor.affiliationumcampus | Ann Arbor | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/48912/2/d6_12_023.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1088/0022-3727/39/12/023 | en_US |
dc.identifier.source | Journal of Physics D: Applied Physics. | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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