RAPID COMMUNICATION: Lateral hopping conductivity and  large negative  magnetoresistance in InAs/AlGaAs self-organized quantum dots

Kochman, B.; Ghosh, S.; Singh, Jasprit; Bhattacharya, Pallab K.

RAPID COMMUNICATION: Lateral hopping conductivity and large negative magnetoresistance in InAs/AlGaAs self-organized quantum dots

Kochman, B.; Ghosh, S.; Singh, Jasprit; Bhattacharya, Pallab K.

2002-08-07

Citation: Kochman, B; Ghosh, S; Singh, J; Bhattacharya, P (2002). "RAPID COMMUNICATION: Lateral hopping conductivity and large negative magnetoresistance in InAs/AlGaAs self-organized quantum dots." Journal of Physics D: Applied Physics. 35(15): L65-L68. <http://hdl.handle.net/2027.42/48914>

Abstract: We report experimental studies on lateral transport in self-organized quantum dots. We find that below 100 K, conduction occurs through interdot hopping and that experimental results are described quite well by a variable-range hopping model. In the hopping regime, the in-plane conductance varies as G = G0exp [(-T0/T)1/3], and T0 is found to be 7100-9400 K. We have also observed a large negative magnetoresistance in this structure.

ISSN: 0022-3727

DOIs: http://dx.doi.org/10.1088/0022-3727/35/15/101

Handle: http://hdl.handle.net/2027.42/48914

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