View Item 

Show simple item record

RAPID COMMUNICATION: Lateral hopping conductivity and large negative magnetoresistance in InAs/AlGaAs self-organized quantum dots

dc.contributor.authorKochman, Boazen_US
dc.contributor.authorGhosh, S.en_US
dc.contributor.authorSingh, Jaspriten_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.date.accessioned2006-12-19T18:58:58Z
dc.date.available2006-12-19T18:58:58Z
dc.date.issued2002-08-07en_US
dc.identifier.citationKochman, B; Ghosh, S; Singh, J; Bhattacharya, P (2002). "RAPID COMMUNICATION: Lateral hopping conductivity and large negative magnetoresistance in InAs/AlGaAs self-organized quantum dots." Journal of Physics D: Applied Physics. 35(15): L65-L68. <http://hdl.handle.net/2027.42/48914>en_US
dc.identifier.issn0022-3727en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/48914
dc.description.abstractWe report experimental studies on lateral transport in self-organized quantum dots. We find that below 100 K, conduction occurs through interdot hopping and that experimental results are described quite well by a variable-range hopping model. In the hopping regime, the in-plane conductance varies as G = G0exp [(-T0/T)1/3], and T0 is found to be 7100-9400 K. We have also observed a large negative magnetoresistance in this structure.en_US
dc.format.extent3118 bytes
dc.format.extent141607 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.publisherIOP Publishing Ltden_US
dc.titleRAPID COMMUNICATION: Lateral hopping conductivity and large negative magnetoresistance in InAs/AlGaAs self-organized quantum dotsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USAen_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USAen_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USAen_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USAen_US
dc.contributor.affiliationumcampusAnn Arboren_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/48914/2/d215l1.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1088/0022-3727/35/15/101en_US
dc.identifier.sourceJournal of Physics D: Applied Physics.en_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


Files in this item

Name:
d215l1.pdf
Size:
138.2KB
Format:
PDF
View/Open

Show simple item record

Remediation of Harmful Language

The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.

Accessibility

If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.