RAPID COMMUNICATION: Lateral hopping conductivity and  large negative  magnetoresistance in InAs/AlGaAs self-organized quantum dots

Kochman, Boaz; Ghosh, S.; Singh, Jasprit; Bhattacharya, Pallab K.

RAPID COMMUNICATION: Lateral hopping conductivity and large negative magnetoresistance in InAs/AlGaAs self-organized quantum dots

dc.contributor.author	Kochman, Boaz	en_US
dc.contributor.author	Ghosh, S.	en_US
dc.contributor.author	Singh, Jasprit	en_US
dc.contributor.author	Bhattacharya, Pallab K.	en_US
dc.date.accessioned	2006-12-19T18:58:58Z
dc.date.available	2006-12-19T18:58:58Z
dc.date.issued	2002-08-07	en_US
dc.identifier.citation	Kochman, B; Ghosh, S; Singh, J; Bhattacharya, P (2002). "RAPID COMMUNICATION: Lateral hopping conductivity and large negative magnetoresistance in InAs/AlGaAs self-organized quantum dots." Journal of Physics D: Applied Physics. 35(15): L65-L68. <http://hdl.handle.net/2027.42/48914>	en_US
dc.identifier.issn	0022-3727	en_US
dc.identifier.uri	https://hdl.handle.net/2027.42/48914
dc.description.abstract	We report experimental studies on lateral transport in self-organized quantum dots. We find that below 100 K, conduction occurs through interdot hopping and that experimental results are described quite well by a variable-range hopping model. In the hopping regime, the in-plane conductance varies as G = G0exp [(-T0/T)1/3], and T0 is found to be 7100-9400 K. We have also observed a large negative magnetoresistance in this structure.	en_US
dc.format.extent	3118 bytes
dc.format.extent	141607 bytes
dc.format.mimetype	text/plain
dc.format.mimetype	application/pdf
dc.language.iso	en_US
dc.publisher	IOP Publishing Ltd	en_US
dc.title	RAPID COMMUNICATION: Lateral hopping conductivity and large negative magnetoresistance in InAs/AlGaAs self-organized quantum dots	en_US
dc.type	Article	en_US
dc.subject.hlbsecondlevel	Physics	en_US
dc.subject.hlbtoplevel	Science	en_US
dc.description.peerreviewed	Peer Reviewed	en_US
dc.contributor.affiliationum	Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USA	en_US
dc.contributor.affiliationum	Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USA	en_US
dc.contributor.affiliationum	Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USA	en_US
dc.contributor.affiliationum	Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USA	en_US
dc.contributor.affiliationumcampus	Ann Arbor	en_US
dc.description.bitstreamurl	http://deepblue.lib.umich.edu/bitstream/2027.42/48914/2/d215l1.pdf	en_US
dc.identifier.doi	http://dx.doi.org/10.1088/0022-3727/35/15/101	en_US
dc.identifier.source	Journal of Physics D: Applied Physics.	en_US
dc.owningcollname	Interdisciplinary and Peer-Reviewed

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