RAPID COMMUNICATION: Lateral hopping conductivity and large negative magnetoresistance in InAs/AlGaAs self-organized quantum dots
dc.contributor.author | Kochman, Boaz | en_US |
dc.contributor.author | Ghosh, S. | en_US |
dc.contributor.author | Singh, Jasprit | en_US |
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.date.accessioned | 2006-12-19T18:58:58Z | |
dc.date.available | 2006-12-19T18:58:58Z | |
dc.date.issued | 2002-08-07 | en_US |
dc.identifier.citation | Kochman, B; Ghosh, S; Singh, J; Bhattacharya, P (2002). "RAPID COMMUNICATION: Lateral hopping conductivity and large negative magnetoresistance in InAs/AlGaAs self-organized quantum dots." Journal of Physics D: Applied Physics. 35(15): L65-L68. <http://hdl.handle.net/2027.42/48914> | en_US |
dc.identifier.issn | 0022-3727 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/48914 | |
dc.description.abstract | We report experimental studies on lateral transport in self-organized quantum dots. We find that below 100 K, conduction occurs through interdot hopping and that experimental results are described quite well by a variable-range hopping model. In the hopping regime, the in-plane conductance varies as G = G0exp [(-T0/T)1/3], and T0 is found to be 7100-9400 K. We have also observed a large negative magnetoresistance in this structure. | en_US |
dc.format.extent | 3118 bytes | |
dc.format.extent | 141607 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.language.iso | en_US | |
dc.publisher | IOP Publishing Ltd | en_US |
dc.title | RAPID COMMUNICATION: Lateral hopping conductivity and large negative magnetoresistance in InAs/AlGaAs self-organized quantum dots | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USA | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USA | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USA | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USA | en_US |
dc.contributor.affiliationumcampus | Ann Arbor | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/48914/2/d215l1.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1088/0022-3727/35/15/101 | en_US |
dc.identifier.source | Journal of Physics D: Applied Physics. | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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