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Access via FulcrumThermal conductivity of tin-doped bismuth between 50 mK and 7K
Uher, Ctirad; Heremans, J. P.; Issi, J. -P.; de Goer, A. M.; Locatelli, M.
1985-05-30
Citation
Uher, C; Heremans, J; Issi, J -P; Goer, A M de; Locatelli, M (1985). "Thermal conductivity of tin-doped bismuth between 50 mK and 7K." Journal of Physics C: Solid State Physics. 18(15): 3001-3010. <http://hdl.handle.net/2027.42/48999>
Abstract
The authors report on the thermal conductivity of tin-doped bismuth between 50 mK and 27K. A quantitative interpretation of the data is presented. At the lowest temperatures the electronic thermal conductivity dominates, but above 0.1K lattice waves carry most of the heat. Below 1K phonons are scattered mostly by crystal boundaries, while near the dielectric maximum point defects are important. Their scattering rate is directly proportional to the atomic concentration of the tin impurity.Publisher
IOP Publishing Ltd
ISSN
0022-3719
Types
Article
Metadata
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