Thermal conductivity of tin-doped bismuth between 50 mK and 7K
Uher, Ctirad; Heremans, J. P.; Issi, J. -P.; de Goer, A. M.; Locatelli, M.
Uher, C; Heremans, J; Issi, J -P; Goer, A M de; Locatelli, M (1985). "Thermal conductivity of tin-doped bismuth between 50 mK and 7K." Journal of Physics C: Solid State Physics. 18(15): 3001-3010. <http://hdl.handle.net/2027.42/48999>
AbstractThe authors report on the thermal conductivity of tin-doped bismuth between 50 mK and 27K. A quantitative interpretation of the data is presented. At the lowest temperatures the electronic thermal conductivity dominates, but above 0.1K lattice waves carry most of the heat. Below 1K phonons are scattered mostly by crystal boundaries, while near the dielectric maximum point defects are important. Their scattering rate is directly proportional to the atomic concentration of the tin impurity.
IOP Publishing Ltd
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