Now showing items 161-169 of 169
The bound-state resonant tunneling transistor (BSRTT): Fabrication, D.C. I-V characteristics and high-frequency properties
(Elsevier, 1990)
The output characteristics of resonant tunneling transistors with a charge filled bound state quantum well base obtained by a self-consistent solution of Poisson's and Schrodinger's equations show the effect of coupling ...
Strained layer epitaxy of InGaAs by MBE and migration enhanced epitaxy -- comparison of growth modes and surface quality
(Elsevier, 1991-05-02)
Our measurements on a series of pseudomorphic n-type modulation doped field effect transistors have shown that the mobility of the two-dimensional carriers appears to suffer from increased interface roughness as the strain ...
One-dimensional inverse scattering problems: an asymmetric two-component wave system framework
(IOP Publishing Ltd, 1989-08-01)
Many one-dimensional inverse scattering problems can be formulated as a two-component wave system inverse problem, including inverse problems for lossless and absorbing acoustic and dielectric media. The advantage of doing ...
Impact of doping and MOCVD conditions on minority carrier lifetime of zinc- and carbon-doped InGaAs and its applications to zinc- and carbon-doped InP/InGaAs heterostructure bipolar transistors
(IOP Publishing Ltd, 2002-06-01)
The impact of doping and metalorganic chemical vapour deposition growth conditions on the minority carrier lifetime of zinc- and carbon-doped InGaAs is reported. Room temperature photoluminescence measurements have been ...
A fabrication process for integrating polysilicon microstructures with post-processed CMOS circuits
(IOP Publishing Ltd, 2000-09-01)
A MEMS-first fabrication process for integrating CMOS circuits with polysilicon micromechanical structures is described in detail. The overall process uses 18 masks (22 lithography steps) to merge a p-well LOCOS CMOS ...
Long range, high resolution laser radar
(Elsevier, 1994-01-15)
A high energy, chirped pulse laser was used to demonstrate long range, high resolution radar. A broadband nanosecond chirped pulse propagated to a target, and upon compression sub-millimeter surface resolution was obtained. ...
Growth and properties of quasiperiodic heterostructures
(Elsevier, 1987-02-02)
We have recently demonstrated the MBE growth of heterostructures in which layers of GaAs and AlAs were deposited in a Fibonacci sequence. This yields a quasiperiodic structure with the ratio of incommensurate periods equal ...
Electric field effects on intersubband transitions in quantum well structures
(Elsevier, 1987)
We report on a Raman scattering study of the electric-field dependence of c0 --> c1 intersubband transitions of electrons in a 264 A GaAs- Al0.3Ga0.7As quantum-well structure. The measured Stark shifts are in very good ...
Growth and properties of In0.52Al0.48As/In0.53Ga0.47As, GaAS: In and InGaAs/GaAs multilayers
(Elsevier, 1987-02-02)
We have investigated the properties of some In-containing materials and heterostructures grown by molecular beam epitaxy on GaAs and InP substrates. Photoluminescence spectra of InGaAs/InAlAs quantum wells have been related ...