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Impacts of nano-structures in p- and i-layer on the performances of amorphous silicon solar cells

dc.contributor.authorLiao, Xianboen_US
dc.contributor.authorDu, Wenhuien_US
dc.contributor.authorCao, Xinminen_US
dc.contributor.authorYang, Xiesenen_US
dc.contributor.authorXiang, Xianbien_US
dc.contributor.authorZhang, Shibinen_US
dc.contributor.authorFan, Qi Huaen_US
dc.contributor.authorSun, Kaien_US
dc.contributor.authorDeng, Xunmingen_US
dc.date.accessioned2009-04-09T14:43:06Z
dc.date.available2010-04-14T17:40:06Zen_US
dc.date.issued2009-03en_US
dc.identifier.citationLiao, Xianbo; Du, Wenhui; Cao, Xinmin; Yang, Xiesen; Xiang, Xianbi; Zhang, Shibin; Fan, Qihua; Sun, Kai; Deng, Xunming (2009). "Impacts of nano-structures in p- and i-layer on the performances of amorphous silicon solar cells." physica status solidi c 6(3): 696-699. <http://hdl.handle.net/2027.42/62060>en_US
dc.identifier.issn1610-1634en_US
dc.identifier.issn1610-1642en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/62060
dc.description.abstractFine-grained nano-structures were introduced in p- and i-layers of n-i-p type hydrogenated amorphous silicon (a-Si:H) based solar cells deposited on stainless steel substrate, and their impacts on the cell performances were characterized. It is found that the hydrogenated nanocrystalline silicon (nc-Si:H) p-layer with a certain nanocrystalline volume fraction leads to a higher V oc of 1.042 V. For the intrinsic layer, introducing a middle-range ordered-like structure and a small amount of nanosized silicon crystallites may decrease the light-induced degradation and increase the stabilized efficiency of n-i-p a-Si:H based solar cells up to 10% for single junction nano-structured a-Si:H solar cells with an area of 0.25 cm 2 , AM1.5, 100 mW/cm 2 . (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)en_US
dc.format.extent364473 bytes
dc.format.extent3118 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.publisherWILEY-VCH Verlagen_US
dc.subject.otherPhysicsen_US
dc.titleImpacts of nano-structures in p- and i-layer on the performances of amorphous silicon solar cellsen_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelElectrical Engineering and Computer Scienceen_US
dc.subject.hlbsecondlevelMaterials Science and Engineeringen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelEngineeringen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumElectron Microbeam Analysis Laboratory, University of Michigan, Ann Arbor, MI 48109, USAen_US
dc.contributor.affiliationotherDepartment of Physics and Astronomy, University of Toledo, Toledo, OH 43606, USA ; Permanent address: Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, P.R. China ; Phone: +1 419 530 4905en_US
dc.contributor.affiliationotherDepartment of Physics and Astronomy, University of Toledo, Toledo, OH 43606, USAen_US
dc.contributor.affiliationotherDepartment of Physics and Astronomy, University of Toledo, Toledo, OH 43606, USAen_US
dc.contributor.affiliationotherDepartment of Physics and Astronomy, University of Toledo, Toledo, OH 43606, USAen_US
dc.contributor.affiliationotherDepartment of Physics and Astronomy, University of Toledo, Toledo, OH 43606, USAen_US
dc.contributor.affiliationotherDepartment of Physics and Astronomy, University of Toledo, Toledo, OH 43606, USAen_US
dc.contributor.affiliationotherDepartment of Physics and Astronomy, University of Toledo, Toledo, OH 43606, USAen_US
dc.contributor.affiliationotherDepartment of Physics and Astronomy, University of Toledo, Toledo, OH 43606, USAen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/62060/1/696_ftp.pdf
dc.identifier.doi10.1002/pssc.200880703en_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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