Soluble InP and GaP Nanowires: Self-Seeded, Solution–Liquid–Solid Synthesis and Electrical Properties
dc.contributor.author | Liu, Zhaoping | en_US |
dc.contributor.author | Sun, Kai | en_US |
dc.contributor.author | Jian, Wen-Bin | en_US |
dc.contributor.author | Xu, Dan | en_US |
dc.contributor.author | Lin, Yen-Fu | en_US |
dc.contributor.author | Fang, Jiye | en_US |
dc.date.accessioned | 2009-05-04T18:25:00Z | |
dc.date.available | 2010-05-07T17:40:09Z | en_US |
dc.date.issued | 2009-04-27 | en_US |
dc.identifier.citation | Liu, Zhaoping; Sun, Kai; Jian, Wen-Bin; Xu, Dan; Lin, Yen-Fu; Fang, Jiye (2009). "Soluble InP and GaP Nanowires: Self-Seeded, Solution–Liquid–Solid Synthesis and Electrical Properties." Chemistry - A European Journal 15(18): 4546-4552. <http://hdl.handle.net/2027.42/62128> | en_US |
dc.identifier.issn | 0947-6539 | en_US |
dc.identifier.issn | 1521-3765 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/62128 | |
dc.identifier.uri | http://www.ncbi.nlm.nih.gov/sites/entrez?cmd=retrieve&db=pubmed&list_uids=19343761&dopt=citation | en_US |
dc.description.abstract | A facile, self-seeded , solution–liquid–solid growth of soluble InP and GaP nanowires with a very low amount of native point defects with respect to the carrier concentrations have been synthesized (see scheme) and characterized. They are potentially promising building blocks in optoelectronic applications. We demonstrate a facile method for self-seeded, solution–liquid–solid growth of soluble InP and GaP nanowires at a temperature of ≈300 °C. Both types of nanowires are single crystals with very small diameters. The synthesized InP nanowires are almost defect-free, whereas the GaP nanowires have some microtwins. The effect of reaction temperatures and input ligand/III/V (III and V indicate elements of Group 13 and 15 respectively) ratios on wire formation is discussed, and two competitive chemical pathways involved in the nanowire formation are proposed. In addition, electrical properties of these III–V nanowires, generated from the solution-based approach, were investigated for the first time. The current-voltage ( I–V ) and room temperature resistance investigations indicate that both InP and GaP nanowires possess very low native point defects for carrier concentrations and they could be potentially promising building blocks in optoelectronic applications. | en_US |
dc.format.extent | 1110900 bytes | |
dc.format.extent | 3118 bytes | |
dc.format.mimetype | application/pdf | |
dc.format.mimetype | text/plain | |
dc.publisher | WILEY-VCH Verlag | en_US |
dc.subject.other | Chemistry | en_US |
dc.subject.other | General Chemistry | en_US |
dc.title | Soluble InP and GaP Nanowires: Self-Seeded, Solution–Liquid–Solid Synthesis and Electrical Properties | en_US |
dc.type | Article | en_US |
dc.rights.robots | IndexNoFollow | en_US |
dc.subject.hlbsecondlevel | Chemistry | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (USA) | en_US |
dc.contributor.affiliationum | Department of Chemistry, State University of New York at Binghamton, Binghamton, New York 13902 (USA), Fax: (+1) 607 777 4478 ; | en_US |
dc.contributor.affiliationother | Department of Chemistry, State University of New York at Binghamton, Binghamton, New York 13902 (USA), Fax: (+1) 607 777 4478 | en_US |
dc.contributor.affiliationother | Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010 (Taiwan) | en_US |
dc.contributor.affiliationother | Department of Chemistry, State University of New York at Binghamton, Binghamton, New York 13902 (USA), Fax: (+1) 607 777 4478 | en_US |
dc.contributor.affiliationother | Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010 (Taiwan) | en_US |
dc.identifier.pmid | 19343761 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/62128/1/4546_ftp.pdf | |
dc.identifier.doi | 10.1002/chem.200900190 | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
Files in this item
Remediation of Harmful Language
The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.
Accessibility
If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.