Critical current density and resistivity of MgB2MgB2 films
dc.contributor.author | Rowell, J. M. | en_US |
dc.contributor.author | Xu, S. Y. | en_US |
dc.contributor.author | Zeng, X. H. | en_US |
dc.contributor.author | Pogrebnyakov, A. V. | en_US |
dc.contributor.author | Li, Qi | en_US |
dc.contributor.author | Xi, X. X. | en_US |
dc.contributor.author | Redwing, J. M. | en_US |
dc.contributor.author | Tian, Wei | en_US |
dc.contributor.author | Pan, Xiaoqing | en_US |
dc.date.accessioned | 2010-05-06T20:32:22Z | |
dc.date.available | 2010-05-06T20:32:22Z | |
dc.date.issued | 2003-07-07 | en_US |
dc.identifier.citation | Rowell, J. M.; Xu, S. Y.; Zeng, X. H.; Pogrebnyakov, A. V.; Li, Qi; Xi, X. X.; Redwing, J. M.; Tian, W.; Pan, Xiaoqing (2003). "Critical current density and resistivity of MgB2MgB2 films." Applied Physics Letters 83(1): 102-104. <http://hdl.handle.net/2027.42/69396> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/69396 | |
dc.description.abstract | The high resistivity of many bulk and film samples of MgB2MgB2 is most readily explained by the suggestion that only a fraction of the cross-sectional area of the samples is effectively carrying current. Hence, the supercurrent (Jc)(Jc) in such samples will be limited by the same area factor, arising for example from porosity or from insulating oxides present at the grain boundaries. We suggest that a correlation should exist, Jc∝1/Δρ300–50 K,Jc∝1/Δρ300–50K, where Δρ300–50 KΔρ300–50K is the change in the apparent resistivity from 300 to 50 K. We report measurements of ρ(T)ρ(T) and JcJc for a number of films made by hybrid physical-chemical vapor deposition which demonstrate this correlation, although the “reduced effective area” argument alone is not sufficient. We suggest that this argument can also apply to many polycrystalline bulk and wire samples of MgB2.MgB2. © 2003 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 126395 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Critical current density and resistivity of MgB2MgB2 films | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, Michigan 48109 | en_US |
dc.contributor.affiliationother | Department of Chemical and Materials Engineering, Arizona State University, Tempe, Arizona 85287 | en_US |
dc.contributor.affiliationother | Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 | en_US |
dc.contributor.affiliationother | Department of Materials Science and Engineering and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/69396/2/APPLAB-83-1-102-1.pdf | |
dc.identifier.doi | 10.1063/1.1590734 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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dc.owningcollname | Physics, Department of |
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