Effect of H on Si molecular‐beam epitaxy
dc.contributor.author | Eaglesham, D. J. | en_US |
dc.contributor.author | Unterwald, F. C. | en_US |
dc.contributor.author | Luftman, H. | en_US |
dc.contributor.author | Adams, David P. | en_US |
dc.contributor.author | Yalisove, Steven M. | en_US |
dc.date.accessioned | 2010-05-06T21:00:43Z | |
dc.date.available | 2010-05-06T21:00:43Z | |
dc.date.issued | 1993-12-01 | en_US |
dc.identifier.citation | Eaglesham, D. J.; Unterwald, F. C.; Luftman, H.; Adams, D. P.; Yalisove, S. M. (1993). "Effect of H on Si molecular‐beam epitaxy." Journal of Applied Physics 74(11): 6615-6618. <http://hdl.handle.net/2027.42/69704> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/69704 | |
dc.description.abstract | In Si crystal growth by molecular‐beam epitaxy (MBE) at low temperatures there is known to be an epitaxial thickness: an initially crystalline regime before the deposited film becomes amorphous. The predominant impurity in MBE is hydrogen, but the role of background H in low‐temperature MBE has not previously been assessed. Here the effect of deliberate dosing of the Si surface with atomic H during low‐T growth is studied. The epitaxial thickness is shown to be sensitive to very small additional H fluxes (≊10−9 Torr, i.e., an increase in H only marginally above ambient). With further increases in dose rate, the epitaxial thickness decreases as hepi=h0−k(ln PH). Using secondary‐ion‐mass spectrometry data on the segregated H at the interface, we argue that breakdown in epitaxy is not caused directly by the surface concentration of adsorbed impurities. It is deduced that very small concentrations of H may influence the Si surface diffusion rate. The possible effect of background H adsorption on previous experiments on Si steps and surface diffusion is discussed. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 602864 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Effect of H on Si molecular‐beam epitaxy | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Materials Science and Engineering, University of Michigan, 2300 Hayward Street, Ann Arbor, Michigan 48109‐2136 | en_US |
dc.contributor.affiliationother | AT&T Bell Labs, 600 Mountain Avenue, Murray Hill, New Jersey 07974 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/69704/2/JAPIAU-74-11-6615-1.pdf | |
dc.identifier.doi | 10.1063/1.355101 | en_US |
dc.identifier.source | Journal of Applied Physics | en_US |
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dc.owningcollname | Physics, Department of |
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