Combined transmission electron microscopy and x‐ray study of the microstructure and texture in sputtered Mo films
dc.contributor.author | Karpenko, O. P. | en_US |
dc.contributor.author | Bilello, John C. | en_US |
dc.contributor.author | Yalisove, Steven M. | en_US |
dc.date.accessioned | 2010-05-06T21:28:43Z | |
dc.date.available | 2010-05-06T21:28:43Z | |
dc.date.issued | 1994-10-15 | en_US |
dc.identifier.citation | Karpenko, O. P.; Bilello, J. C.; Yalisove, S. M. (1994). "Combined transmission electron microscopy and x‐ray study of the microstructure and texture in sputtered Mo films." Journal of Applied Physics 76(8): 4610-4617. <http://hdl.handle.net/2027.42/70000> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70000 | |
dc.description.abstract | The microstructure and texture of thin Mo films sputtered onto the native oxide of Si(100) wafers were investigated with both conventional reflection x‐ray pole figures, and transmission electron microscopy and diffraction. Films were grown at two deposition rates (powers), 34 nm/min (1.5 kW) and 67 nm/min (3.9 kW), onto both moving and stationary substrates, under otherwise identical experimental conditions. The microstructure of the Mo films evolved into a zone 2 microstructure within the first 2 μm of growth. The development of both out‐of‐plane and in‐plane textures was found to be influenced by deposition rate and geometry. Films grown at the lower deposition rate exhibited predominantly {110} textures, while films grown at the higher rate exhibited predominantly {110} textures up to a film thickness of ∼0.5 μm and {111} textures above a film thickness of ∼1 μm. Films with the {110} textures developed grains with elongated footprints and faceted surfaces, while films with the {111} textures developed grains with elongated triangular footprints and faceted surfaces. In all of the films deposited onto moving substrates, an alignment of the grains normal to the tangent plane (defined by the substrate normal and the direction of platen rotation) was observed. In all of the films deposited onto stationary substrates, the development of an in‐plane texture was suppressed. These results suggest that a combination of geometric, energetic, and kinetic mechanisms are contributing to the evolution of the microstructure and texture in the Mo films. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 1183133 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Combined transmission electron microscopy and x‐ray study of the microstructure and texture in sputtered Mo films | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Materials Science and Engineering, University of Michigan, 2300 Hayward Street, Ann Arbor, Michigan 48109‐2136 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70000/2/JAPIAU-76-8-4610-1.pdf | |
dc.identifier.doi | 10.1063/1.357295 | en_US |
dc.identifier.source | Journal of Applied Physics | en_US |
dc.identifier.citedreference | S. P. Murarka,Metallization: Theory and Practice for VLSI and ULSI (Butterworth-Heinemann, Boston, 1993). | en_US |
dc.identifier.citedreference | D. P. Adams, M. Vill, J. Tao, J. C. Bilello, and S. M. Yalisove, J. Appl. Phys. 74, 1015 (1993). | en_US |
dc.identifier.citedreference | M. T. Kief and W. F. Egelhoff, Jr., J. Appl. Phys. 73, 6195 (1993). | en_US |
dc.identifier.citedreference | A. Kawamoto and F. Hikami, J. Appl. Phys. 69, 5151 (1991). | en_US |
dc.identifier.citedreference | M. R. Kim, S. Guruswamy, and K. E. Johnson, J. Appl. Phys. 74, 4643 (1993). | en_US |
dc.identifier.citedreference | S. Uchinami, F. Beppu, S. Ito, N. Tokubuch, K. Noda, Y. Notohara, and K. Kanai, IEEE Trans. Magn. MAG-23, 3408 (1987). | en_US |
dc.identifier.citedreference | B. A. Movchan and A. V. Demchishin, Phys. Met. Metallogr. 28, 83 (1969). | en_US |
dc.identifier.citedreference | J. A. Thornton, Ann. Rev. Mater. Sci. 7, 239 (1977). | en_US |
dc.identifier.citedreference | H. J. Leamy, G. H. Gilmer, and A. G. Dirks, Thin Solid Films 47, 219 (1977). | en_US |
dc.identifier.citedreference | C. R. M. Grovenor, H. T. G. Hentzell, and D. A. Smith, Acta Metall. 32, 773 (1984). | en_US |
dc.identifier.citedreference | D. Henderson, M. H. Brodsky, and P. Chaudhari, Appl. Phys. Lett. 25, 641 (1974). | en_US |
dc.identifier.citedreference | T. J. Vink and J. B. A. D. van Zon, J. Vac. Sci. Technol. A 9, 124 (1991). | en_US |
dc.identifier.citedreference | H. Windischmann, Crit. Rev. Solid State Mater. Sci. 17, 547 (1992), and references cited within. | en_US |
dc.identifier.citedreference | J. G. W. van de Waterbeemd and G. W. van Oosterhout, Philips Res. Rep. 22, 375 (1967). | en_US |
dc.identifier.citedreference | A. N. Campbell, R. E. Mikawa, and D. B. Knorr, J. Electron. Mater. 22, 589 (1993). | en_US |
dc.identifier.citedreference | D. B. Knorr, D. P. Tracy, and K. P. Rodbell, Appl. Phys. Lett. 59, 3241 (1991). | en_US |
dc.identifier.citedreference | R. Penelle, in Texture of Materials, edited by G. Gottstein and K. Lucke (Springer, New York, 1978), pp. 129–153. | en_US |
dc.identifier.citedreference | P. R. Morris and J. W. Flowers, Texture Crystall. Solids 4, 129 (1981). | en_US |
dc.identifier.citedreference | D. Q. Smith, M. S. Cohen, and G. P. Weiss, J. Appl. Phys. 31, 1755 (1960). | en_US |
dc.identifier.citedreference | F. C. Frank and J. H. van der Merwe, Proc. R. Soc. London A 198, 216 (1949). | en_US |
dc.identifier.citedreference | E. Bauer, Z. Krist 110, 372 (1958). | en_US |
dc.identifier.citedreference | D. P. Adams, S. M. Yalisove, and D. J. Eaglesham, Appl. Phys. Lett. 63, 3571 (1994). | en_US |
dc.identifier.citedreference | J. E. Sanchez and E. Arzt, Scripta Metall. Mater. 27, 285 (1992). | en_US |
dc.identifier.citedreference | C. V. Thompson, Scripta Metall. Mater. 28, 167 (1993). | en_US |
dc.identifier.citedreference | J. A. Floro and C. V. Thompson, Acta Metall. Mater. 41, 1137 (1993). | en_US |
dc.identifier.citedreference | D. J. Srolovitz, J. Vac. Sci. Technol. A 4, 2925 (1986). | en_US |
dc.identifier.citedreference | C. V. Thompson, Ann. Rev. Mater. Sci. 20, 245 (1990). | en_US |
dc.identifier.citedreference | G. Abbruzzese and K. Lucke, Acta Metall. Mater. 34, 905 (1986). | en_US |
dc.identifier.citedreference | H. Eichelkraut, G. Abbruzzese, and K. Lucke, Acta Metall. Mater. 36, 55 (1988). | en_US |
dc.identifier.citedreference | D. D. Dobrev, in Texture of Materials, edited by G. Gottstein and K. Lucke (Springer, New York, 1978), pp. 171–179. | en_US |
dc.identifier.citedreference | M. Fisher and D. A. Smith, Textures and Microstructures 13, 91 (1991). | en_US |
dc.identifier.citedreference | A. A. Macdowell, NSLS Newsletter, March, pp. 4–5 (1994). | en_US |
dc.identifier.citedreference | J. M. Harris, E. Lugujjo, S. U. Campisano, M.-A. Nicolet, and R. J. Shima, J. Vac. Sci. Technol. 12, 524 (1975). | en_US |
dc.identifier.citedreference | L. G. Schultz, J. Appl. Phys. 20, 1030 (1949). | en_US |
dc.identifier.citedreference | Correction term used in the pole figure analysis software provided by Rigaku. | en_US |
dc.identifier.citedreference | The convention of quantifying texture with a “times random" scale can be seen in numerous references, including C. S. Barrett and T. B. Massalski, Structure of Metals(McGraw-Hill, New York, 1966), pp. 541–567. | en_US |
dc.identifier.citedreference | H. Konig and G. Helwig, Optik 6, 111 (1950). | en_US |
dc.identifier.citedreference | S. G. Malhotra, Z. Rek, M. Vill, O. P. Karpenko, S. M. Yalisove, and J. C. Billelo, Material Research Society Symposium Proceedings (Materials Research Society, Pittsburgh, 1994), Vol. 317, p. 473. | en_US |
dc.identifier.citedreference | D. J. Srolovitz, Acta Metall. Mater. 37, 621 (1989). | en_US |
dc.identifier.citedreference | W. Kossel, Nachr. Ges. Wiss. Gottingen, 135 (1927). | en_US |
dc.identifier.citedreference | S. M. Foiles, Phys. Rev. B 48, 4287 (1993). | en_US |
dc.identifier.citedreference | M. Zaouali, J. L. Lebrun, and Z. Gergaud, Surf. Coat. Technol. 50, 5 (1991). | en_US |
dc.identifier.citedreference | D. W. Hoffman and J. A. Thornton, J. Vac. Sci. Technol. 20, 355 (1982). | en_US |
dc.identifier.citedreference | T. J. Vink, M. A. J. Somers, J. L. C. Daams, and A. G. Dirks, J. Appl. Phys. 70, 4301 (1991). | en_US |
dc.identifier.citedreference | A. Mazor, D. J. Srolovitz, P. S. Hagen, and B. G. Bukiet, Phys. Rev. Lett. 60, 424 (1988). | en_US |
dc.identifier.citedreference | M. A. Sherman, R. F. Bunshaw, and H. A. Beale, J. Vac. Sci. Technol. 12, 697 (1975). | en_US |
dc.owningcollname | Physics, Department of |
Files in this item
Remediation of Harmful Language
The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.
Accessibility
If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.