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In‐plane hole effective masses in InxGa1−xAs/Al0.15Ga0.85As modulation‐doped heterostructures
Jaffe, M.; Oh, J. E.; Pamulapati, J.; Singh, J.; Bhattacharya, P.
Jaffe, M.; Oh, J. E.; Pamulapati, J.; Singh, J.; Bhattacharya, P.
1989-06-05
Citation:Jaffe, M.; Oh, J. E.; Pamulapati, J.; Singh, J.; Bhattacharya, P. (1989). "In‐plane hole effective masses in InxGa1−xAs/Al0.15Ga0.85As modulation‐doped heterostructures." Applied Physics Letters 54(23): 2345-2346. <http://hdl.handle.net/2027.42/70045>
Abstract: We have determined the strain dependence of the in‐plane hole effective mass in pseudomorphic Inx Ga1−x As/Al0.15 Ga0.85As modulation‐doped heterostructures by low‐temperature Shubnikov–de Haas measurements. An effective mass equal to 0.18m0 is measured for x=0.2. The measured values are in good agreement with theoretical calculations.
