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Surface reconstructions of In-enriched InGaAs alloys
dc.contributor.authorMillunchick, Joanna Mireckien_US
dc.contributor.authorRiposan, Alexandruen_US
dc.contributor.authorDall, B. J.en_US
dc.contributor.authorPearson, Chris A.en_US
dc.contributor.authorOrr, B. G.en_US
dc.date.accessioned2010-05-06T21:34:45Z
dc.date.available2010-05-06T21:34:45Z
dc.date.issued2003-08-18en_US
dc.identifier.citationMillunchick, J. Mirecki; Riposan, A.; Dall, B. J.; Pearson, Chris; Orr, B. G. (2003). "Surface reconstructions of In-enriched InGaAs alloys." Applied Physics Letters 83(7): 1361-1363. <http://hdl.handle.net/2027.42/70065>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70065
dc.description.abstractThe atomic structure of In0.81Ga0.19As/InPIn0.81Ga0.19As/InP alloy layers was examined using in situ scanning tunneling microscopy. The (2×3) reconstruction observed during growth by reflection high-energy electron diffraction represents a combination of surface structures, including a β2(2×4) commonly observed on GaAs(001) and InAs(001) surfaces, and a disordered (4×3) that is unique to alloy systems. The proposed (4×3) structure is comprised of both anion and cation dimers. Empty and filled states images show that the features reverse contrast with sample bias, in agreement with the model. © 2003 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent243842 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleSurface reconstructions of In-enriched InGaAs alloysen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationumDepartment of Computer Science, Engineering Science and Physics, University of Michigan-Flint, Flint, Michigan 48502en_US
dc.contributor.affiliationumThe Harrison M. Randall Laboratory, University of Michigan, Ann Arbor, Michigan 48109en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70065/2/APPLAB-83-7-1361-1.pdf
dc.identifier.doi10.1063/1.1602557en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnameInnovation and Technology, College of (UM-Flint)


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