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Lateral composition modulation in short period superlattices: The role of growth mode
dc.contributor.authorDorin, C.en_US
dc.contributor.authorMirecki-Millunchick, Joannaen_US
dc.contributor.authorChen, Y.en_US
dc.contributor.authorOrr, B. G.en_US
dc.contributor.authorPearson, Chris A.en_US
dc.date.accessioned2010-05-06T21:37:49Z
dc.date.available2010-05-06T21:37:49Z
dc.date.issued2001-12-17en_US
dc.identifier.citationDorin, C.; Mirecki Millunchick, J.; Chen, Y.; Orr, B. G.; Pearson, C. A. (2001). "Lateral composition modulation in short period superlattices: The role of growth mode." Applied Physics Letters 79(25): 4118-4120. <http://hdl.handle.net/2027.42/70098>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70098
dc.description.abstractThe role of the growth mode on lateral composition modulation is studied in short period superlattices of AlAs/InAs and GaAs/InAs. Reflection high energy electron diffraction and scanning tunneling microscopy are used to monitor the growth mode and the quality of the interfaces. Cross-sectional transmission electron microscopy indicates that samples that grow via the layer-by-layer growth mode do not exhibit lateral composition modulation and the superlattice structure is well defined. Lateral composition modulation forms when roughening occurs during growth. However, too much roughening, i.e., three-dimensional island nucleation destroys the regularity of the composition modulation in both the lateral and vertical directions. These results are in general agreement with theoretical predictions. © 2001 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent241124 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleLateral composition modulation in short period superlattices: The role of growth modeen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationumThe Harrison M. Randall Laboratory, University of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationumDepartment of Computer Science, Engineering Science and Physics, University of Michigan–Flint, Flint, Michigan 48502en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70098/2/APPLAB-79-25-4118-1.pdf
dc.identifier.doi10.1063/1.1425452en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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