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Mechanics of wafer bonding: Effect of clamping

dc.contributor.authorTurner, K. T.en_US
dc.contributor.authorThouless, Michael D.en_US
dc.contributor.authorSpearing, S. M.en_US
dc.date.accessioned2010-05-06T21:41:37Z
dc.date.available2010-05-06T21:41:37Z
dc.date.issued2004-01-01en_US
dc.identifier.citationTurner, K. T.; Thouless, M. D.; Spearing, S. M. (2004). "Mechanics of wafer bonding: Effect of clamping." Journal of Applied Physics 95(1): 349-355. <http://hdl.handle.net/2027.42/70139>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70139
dc.description.abstractA mechanics-based model is developed to examine the effects of clamping during wafer bonding processes. The model provides closed-form expressions that relate the initial geometry and elastic properties of the wafers to the final shape of the bonded pair and the strain energy release rate at the interface for two different clamping configurations. The results demonstrate that the curvature of bonded pairs may be controlled through the use of specific clamping arrangements during the bonding process. Furthermore, it is demonstrated that the strain energy release rate depends on the clamping configuration and that using applied loads usually leads to an undesirable increase in the strain energy release rate. The results are discussed in detail and implications for process development and bonding tool design are highlighted. © 2004 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent106792 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/octet-stream
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleMechanics of wafer bonding: Effect of clampingen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumUniversity of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationotherMassachusetts Institute of Technology, Cambridge, Massachusetts 02139en_US
dc.contributor.affiliationotherMassachusetts Institute of Technology, Cambridge, Massachusetts 02139en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70139/2/JAPIAU-95-1-349-1.pdf
dc.identifier.doi10.1063/1.1629776en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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