Cooperative nucleation leading to ripple formation in InGaAs/GaAs films
dc.contributor.author | Chokshi, Nehal S. | en_US |
dc.contributor.author | Mirecki-Millunchick, Joanna | en_US |
dc.date.accessioned | 2010-05-06T22:35:15Z | |
dc.date.available | 2010-05-06T22:35:15Z | |
dc.date.issued | 2000-04-24 | en_US |
dc.identifier.citation | Chokshi, Nehal S.; Mirecki Millunchick, Joanna (2000). "Cooperative nucleation leading to ripple formation in InGaAs/GaAs films." Applied Physics Letters 76(17): 2382-2384. <http://hdl.handle.net/2027.42/70708> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70708 | |
dc.description.abstract | In0.25Ga0.75AsIn0.25Ga0.75As epilayers were grown on GaAs (001) substrates (1.8% misfit strain) by molecular beam epitaxy to investigate the two-dimensional to three-dimensional transition as a function of thickness (t ⩽ 30 MLs).(t⩽30MLs). Tapping-mode atomic force micrographs show the evolution of the morphology as a function of thickness. As the film is deposited, the nucleation of 3D islands followed by cooperative nucleation of pits is observed. As the thickness increases, both islands and pits continue to nucleate and grow until they coalesce, resulting in a fully formed ripple morphology running along the [10].[11̄0]. The ripples also exhibit a secondary alignment roughly along the 〈310〉 which is attributed to the nucleation of islands with {136} faces. © 2000 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 148278 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Cooperative nucleation leading to ripple formation in InGaAs/GaAs films | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70708/2/APPLAB-76-17-2382-1.pdf | |
dc.identifier.doi | 10.1063/1.126353 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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dc.owningcollname | Physics, Department of |
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