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Theory of photoluminescence in quantum wells in the presence of transverse electric field: Monte Carlo approach

dc.contributor.authorSingh, Jaspriten_US
dc.date.accessioned2010-05-06T22:54:22Z
dc.date.available2010-05-06T22:54:22Z
dc.date.issued1986-04-15en_US
dc.identifier.citationSingh, Jasprit (1986). "Theory of photoluminescence in quantum wells in the presence of transverse electric field: Monte Carlo approach." Journal of Applied Physics 59(8): 2953-2957. <http://hdl.handle.net/2027.42/70910>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70910
dc.description.abstractThe Monte Carlo approach is used to study the quasibound electron and hole ground‐state levels in a quantum well in the presence of a transverse electric field. A criteria is developed to ensure that the ground state is a true quasibound state. These techniques are applied to an Al0.3Ga0.7As/GaAs quantum well subjected to a high electric field perpendicular to the interfaces. Results on the electron and hole tunneling rates and their dependence on band‐edge discontinuities are presented. The variation of the ground‐state emission energy with the electric field is also presented.en_US
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleTheory of photoluminescence in quantum wells in the presence of transverse electric field: Monte Carlo approachen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical and Computer Engineering, The University of Michigan,Ann Arbor, Michigan 48109en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70910/2/JAPIAU-59-8-2953-1.pdf
dc.identifier.doi10.1063/1.336933en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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