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Epitaxial growth and dielectric properties of homologous Srm−3Bi4TimO3m+3Srm−3Bi4TimO3m+3 (m = 3,4,5,6)(m=3,4,5,6) thin films
Zhang, S. T.; Chen, Y. F.; Sun, H. P.; Pan, X. Q.; Liu, Z. G.; Ming, N. B.
Zhang, S. T.; Chen, Y. F.; Sun, H. P.; Pan, X. Q.; Liu, Z. G.; Ming, N. B.
2002-12-23
Citation:Zhang, S. T.; Chen, Y. F.; Sun, H. P.; Pan, X. Q.; Liu, Z. G.; Ming, N. B. (2002). "Epitaxial growth and dielectric properties of homologous Srm−3Bi4TimO3m+3Srm−3Bi4TimO3m+3 (m = 3,4,5,6)(m=3,4,5,6) thin films." Applied Physics Letters 81(26): 5009-5011. <http://hdl.handle.net/2027.42/71193>