Epitaxial growth and dielectric properties of homologous Srm−3Bi4TimO3m+3Srm−3Bi4TimO3m+3 (m = 3,4,5,6)(m=3,4,5,6) thin films
dc.contributor.author | Zhang, S. T. | en_US |
dc.contributor.author | Chen, Y. F. | en_US |
dc.contributor.author | Sun, H. P. | en_US |
dc.contributor.author | Pan, Xiaoqing | en_US |
dc.contributor.author | Liu, Zhi-Guo | en_US |
dc.contributor.author | Ming, N. B. | en_US |
dc.date.accessioned | 2010-05-06T23:21:10Z | |
dc.date.available | 2010-05-06T23:21:10Z | |
dc.date.issued | 2002-12-23 | en_US |
dc.identifier.citation | Zhang, S. T.; Chen, Y. F.; Sun, H. P.; Pan, X. Q.; Liu, Z. G.; Ming, N. B. (2002). "Epitaxial growth and dielectric properties of homologous Srm−3Bi4TimO3m+3Srm−3Bi4TimO3m+3 (m = 3,4,5,6)(m=3,4,5,6) thin films." Applied Physics Letters 81(26): 5009-5011. <http://hdl.handle.net/2027.42/71193> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/71193 | |
dc.description.abstract | The first four members of Bi-layered Srm−3Bi4TimO3m+3Srm−3Bi4TimO3m+3 homologous series with m = 3,m=3, 4, 5, and 6, i.e., Bi4Ti3O12,Bi4Ti3O12, SrBi4Ti4O15,SrBi4Ti4O15, Sr2Bi4Ti5O18,Sr2Bi4Ti5O18, and Sr3Bi4Ti6O21,Sr3Bi4Ti6O21, were grown on SrTiO3SrTiO3 (001) single-crystal substrates by pulsed-laser deposition. X-ray diffraction and high-resolution transmission electron microscopy (HRTEM) reveal that the films grew epitaxially with in-plane epitaxial alignment of [10]Srm−3Bi4TimO3m+3‖[010]SrTiO3.[11̄0]Srm−3Bi4TimO3m+3‖[010]SrTiO3. HRTEM cross-sectional images show that the films with m = 3,m=3, 4, and 5 are nearly free of intergrowth, whereas a number of growth defects were observed in the film with m = 6.m=6. Using an evanescent microwave probe, the room-temperature dielectric constants of these epitaxial films are measured to be 221±13,221±13, 205±15,205±15, 261±29,261±29, and 249±17249±17 for films with m = 3,m=3, 4, 5, and 6, respectively. © 2002 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 270053 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Epitaxial growth and dielectric properties of homologous Srm−3Bi4TimO3m+3Srm−3Bi4TimO3m+3 (m = 3,4,5,6)(m=3,4,5,6) thin films | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, Michigan 48109-2136 | en_US |
dc.contributor.affiliationother | Department of Materials Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People’s Republic of China | en_US |
dc.contributor.affiliationother | Department of Materials Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People’s Republic of China | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/71193/2/APPLAB-81-26-5009-1.pdf | |
dc.identifier.doi | 10.1063/1.1530741 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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