Effect of hydrogen on surface roughening during Si homoepitaxial growth
dc.contributor.author | Adams, David P. | en_US |
dc.contributor.author | Yalisove, Steven M. | en_US |
dc.contributor.author | Eaglesham, D. J. | en_US |
dc.date.accessioned | 2010-05-06T23:23:05Z | |
dc.date.available | 2010-05-06T23:23:05Z | |
dc.date.issued | 1993-12-27 | en_US |
dc.identifier.citation | Adams, D. P.; Yalisove, S. M.; Eaglesham, D. J. (1993). "Effect of hydrogen on surface roughening during Si homoepitaxial growth." Applied Physics Letters 63(26): 3571-3573. <http://hdl.handle.net/2027.42/71213> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/71213 | |
dc.description.abstract | Hydrogen is shown to have a strong influence on the evolution of surface morphology during low temperature (310 °C) Si(100) homoepitaxy. Molecular beam epitaxy growth in the presence of deuterium shows a surface roughness within the epitaxial film that increases rapidly until the Si film exhibits a crystalline to amorphous transition. The rate at which the surface roughens depends critically on the partial pressure of deuterium. Although the kinetics of growth are sensitive to small pressures (4×10−8 Torr) of D, it appears that the breakdown of epitaxy does not result from a ‘‘critical’’ D concentration at the surface. This work suggests that the crystalline to amorphous transition, instead, results from increased roughening during epitaxy. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 618548 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Effect of hydrogen on surface roughening during Si homoepitaxial growth | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109‐2136 | en_US |
dc.contributor.affiliationother | AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/71213/2/APPLAB-63-26-3571-1.pdf | |
dc.identifier.doi | 10.1063/1.110100 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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dc.owningcollname | Physics, Department of |
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