Amorphous In-Ga-Zn-O Thin Film Transistors for Active-Matrix Organic Light-Emitting Displays.
dc.contributor.author | Chen, Charlene | en_US |
dc.date.accessioned | 2010-08-27T15:23:33Z | |
dc.date.available | NO_RESTRICTION | en_US |
dc.date.available | 2010-08-27T15:23:33Z | |
dc.date.issued | 2010 | en_US |
dc.date.submitted | en_US | |
dc.identifier.uri | https://hdl.handle.net/2027.42/77902 | |
dc.description.abstract | Active-matrix organic light-emitting display (AMOLED) is now generally viewed as the next generation display because of its vivid color, high contrast ratio, thin/light module, and low energy consumption. So far, most reported pixel circuits are either based on low temperature polysilicon (LTPS) thin film transistors (TFTs) or hydrogenated amorphous silicon (a-Si:H) TFTs. Both backplane technologies have their own shortcomings, such as nonuniformity of LTPS TFTs, low field-effect mobility and threshold voltage instability of a-Si:H TFTs. As a result, TFTs based on other semiconductor materials have been explored as an alternative approach to realize reliable, high resolution AMOLEDs. Among all, amorphous In-Ga-Zn-O (a- IGZO) TFTs possess certain advantages including visible transparency, low processing temperature, uniformity over large area, and good electrical performance, which make them very attractive for AMOLEDs. The focus of this work has been to provide a more thorough understanding of the device performance of a-IGZO TFTs, along with the underlying semiconductor physics and their possible application to AMOLEDs. Firstly, the electronic structure of crystalline In-Ga-Zn-O was studied by ab initio quantum mechanics calculation. Then the electrical properties of a-IGZO TFTs were described, including the gate voltage dependent field-effect mobility and source/drain contact resistance. The operation principles of a-IGZO TFTs were further investigated by the channel region surface potential profile obtained by scanning Kelvin probe microscopy. The effect of temperature on the electrical properties of a-IGZO TFTs was investigated. The thermally activated drain current was explored, and the density of deep states profile was calculated from measured data. Current temperature stress measurements were performed on a-IGZO TFTs. Several factors were considered when investigating the electrically stability of the devices, including the stress time, stress temperature, stress current, and TFT biasing conditions. Finally, a-IGZO TFT SPICE model was developed based on the RPI a-Si:H TFT model. Several voltage- and current-programmed AMOLED pixel circuits were simulated. The effect of threshold voltage variation on the pixel circuit performance was investigated, and the potential advantages of using a-IGZO TFTs were discussed. | en_US |
dc.format.extent | 1377460 bytes | |
dc.format.extent | 1373 bytes | |
dc.format.mimetype | application/pdf | |
dc.format.mimetype | text/plain | |
dc.language.iso | en_US | en_US |
dc.subject | Amorphous In-Ga-Zn-O | en_US |
dc.subject | Thin Film Transistors | en_US |
dc.subject | Active-matrix Organic Light Emitting Displays | en_US |
dc.title | Amorphous In-Ga-Zn-O Thin Film Transistors for Active-Matrix Organic Light-Emitting Displays. | en_US |
dc.type | Thesis | en_US |
dc.description.thesisdegreename | PhD | en_US |
dc.description.thesisdegreediscipline | Electrical Engineering | en_US |
dc.description.thesisdegreegrantor | University of Michigan, Horace H. Rackham School of Graduate Studies | en_US |
dc.contributor.committeemember | Kanicki, Jerzy | en_US |
dc.contributor.committeemember | Green, Peter F. | en_US |
dc.contributor.committeemember | Ku, P.C. | en_US |
dc.contributor.committeemember | Lu, Wei | en_US |
dc.subject.hlbsecondlevel | Electrical Engineering | en_US |
dc.subject.hlbtoplevel | Engineering | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/77902/1/charchic_1.pdf | |
dc.owningcollname | Dissertations and Theses (Ph.D. and Master's) |
Files in this item
Remediation of Harmful Language
The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.
Accessibility
If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.