Now showing items 21-30 of 33
Phase separation during film growth
(The American Institute of Physics, 1992-07-15)
A diffusion equation describing phase separation during co‐deposition of a binary alloy is derived, and solved in the limit of dominant surface diffusion. Linear stability analysis yields results similar to bulk spinodal ...
Thermodynamic properties of metastable Ag‐Cu alloys
(The American Institute of Physics, 1993-09-01)
The enthalpies of formation of metastable fcc Ag‐Cu solid solutions, produced by ball milling of elemental powders, were determined by differential scanning calorimetry. Experimental thermodynamic data for these metastable ...
Depth dependence of residual strains in polycrystalline Mo thin films using high‐resolution x‐ray diffraction
(The American Institute of Physics, 1996-05-01)
The magnitude of the stress in a thin film can be obtained by measuring the curvature of the film–substrate couple. Crystal curvature techniques yield the average stress throughout the film thickness. On a microscopic ...
Effect of hydrogen on surface roughening during Si homoepitaxial growth
(The American Institute of Physics, 1993-12-27)
Hydrogen is shown to have a strong influence on the evolution of surface morphology during low temperature (310 °C) Si(100) homoepitaxy. Molecular beam epitaxy growth in the presence of deuterium shows a surface roughness ...
CoSi2 heteroepitaxy on patterned Si(100) substrates
(The American Institute of Physics, 1996-12-01)
The influence of starting surface topography on the nucleation and growth of epitaxial silicide layers was investigated. CoSi2 layers were grown via the template technique on one‐dimensionally patterned Si(100) substrates. ...
Surface roughening during low temperature Si(100) epitaxy
(The American Institute of Physics, 1997-08-01)
Reflection high energy electron diffraction (RHEED) was used to investigate surface roughening during low temperature Si(100) homoepitaxy. The use of RHEED allowed in situ real-time collection of structural information ...
Controlling strength and toughness of multilayer films: A new multiscalar approach
(The American Institute of Physics, 1993-07-15)
Multiscalar films are produced in order to combine both toughness and strength into a multilayer film. These structures incorporate both a strengthening phase and a toughening phase in a compositionally modulated microcomposite. ...
Effect of H on Si molecular‐beam epitaxy
(The American Institute of Physics, 1993-12-01)
In Si crystal growth by molecular‐beam epitaxy (MBE) at low temperatures there is known to be an epitaxial thickness: an initially crystalline regime before the deposited film becomes amorphous. The predominant impurity ...
Transition from lateral to transverse phase separation during film co‐deposition
(The American Institute of Physics, 1991-11-11)
We report observations of two distinct types of phase‐separated microstructures in co‐deposited Al‐Ge films. In the initial stages of growth, lateral phase separation is observed, with a temperature dependence consistent ...
Scattering of ultraviolet radiation in turbid suspensions
(The American Institute of Physics, 1997-03-15)
A Beer’s law expression for the penetration depth of ultraviolet radiation in a concentrated suspension of scattering particles is used to model the depth of cure for a suspension of ceramic particles in a medium of ...