Now showing items 1-5 of 5
Interfacial and surface energetics of CoSi2
(The American Institute of Physics, 1994-11-01)
The energetics of the CoSi2‐Si interface and the CoSi2 surface have been investigated by analyzing the equilibrium shapes of isolated silicide precipitates. CoSi2 precipitates grown by heating 2 Å of Co on a clean, ...
Low‐temperature homoepitaxial growth on nonplanar Si substrates
(The American Institute of Physics, 1994-11-01)
The kinetics associated with the breakdown of epitaxy at low temperatures are studied for growth onto a number of Si surfaces, including (001), (117), (115), and (113). These surfaces are all initially generated at trench ...
Effect of hydrogen on surface roughening during Si homoepitaxial growth
(The American Institute of Physics, 1993-12-27)
Hydrogen is shown to have a strong influence on the evolution of surface morphology during low temperature (310 °C) Si(100) homoepitaxy. Molecular beam epitaxy growth in the presence of deuterium shows a surface roughness ...
Controlling strength and toughness of multilayer films: A new multiscalar approach
(The American Institute of Physics, 1993-07-15)
Multiscalar films are produced in order to combine both toughness and strength into a multilayer film. These structures incorporate both a strengthening phase and a toughening phase in a compositionally modulated microcomposite. ...
Effect of H on Si molecular‐beam epitaxy
(The American Institute of Physics, 1993-12-01)
In Si crystal growth by molecular‐beam epitaxy (MBE) at low temperatures there is known to be an epitaxial thickness: an initially crystalline regime before the deposited film becomes amorphous. The predominant impurity ...