Now showing items 1-4 of 4
Characteristics of dislocations at strained heteroepitaxial InGaAs/GaAs interfaces
(The American Institute of Physics, 1989-10-01)
The formation, interaction, and propagation of misfit dislocations in molecular‐beam epitaxial InGaAs/GaAs heterointerfaces have been studied by transmission electron microscopy. With the lattice mismatch less than 2%, ...
The Michigan Ion Beam Laboratory for Surface Modification and Analysis
(Elsevier, 1989-04-02)
The Michigan Ion Beam Laboratory for Surface Modification and Analysis was established in October of 1986 for the purpose of advancing our understanding of ion-solid interactions on both the fundamental and applied levels. ...
Growth phenomena and characteristics of strained InxGa1-xAs on GaAs
(Elsevier, 1989-02-02)
We have investigated the molecular beam epitaxial growth, structural and optical properties of InGaAs on GaAs. We have focused first on the initial stages of growth where the growth is expected to be under coherent strain ...
Grain growth and phase morphology in ion beam mixed, two phase Ni---Al and Ni---Cr---Al alloys
(Elsevier, 1989-03-02)
Multilayers of Ni---21Al and Ni---20Cr---10Al were subjected to ion beam mixing using 350 keV Ni+ ions and/or thermal annealing at 440[deg]C to study the development of grain growth and phase morphology. Two film thicknesses ...